, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJ15003 (npn), mj15o04 (pnp) complementary silicon power transistors 20 ampere power transistors complementary silicon 140 volts, 250 watts maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous base current - continuous emitter current - continuous total power dissipation @ tc = 25c derate above 25" c operating and storage junction temperature range symbol vceo vcbo vebo ic ib ie pd tj- tstg value 140 140 5 20 5 25 250 1.43 -65 to + 200 unit vdc vdc vdc adc adc adc w w/c o schematic pnp npn case 3 case 3 base \t*v/ n^ emitter 2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics base emitter 2 to-204aa (to-3) case 1-07 style 1 characteristic thermal resistance, junction-to-case maximum lead temperature for soldering purposes 1/1 6" from case for < 10 sees symbol rhjc tl max 0.70 265 unit cc/w c marking diagram mj1500x = device code x = 3 or 4 = pb-free package = location code = year - workweek ,, = country of orgin nj semi-conductors reserves the ri^ht to change test conditions, parameter limits ,ind package dimensions without notice- information furnished by nj semi- conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for ,iny errors or omission-; discovered in ik lisp nl semi-conductors encourages customer1, to verify thdt datjstieet ,ire current before placing orders. quality semi-conductors
electrical characteristics (tc - 25"c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter sustaining voltage (note 1) (lc = 200 madc, ib = 0) collector cutoff current (vce = 1 40 vdc, vbe(off) = 1 .5 vdc) (vce = 140 vdc, vbe(off) = 1.5vdc,tc = 150c) collector cutoff current (vce - 140 vdc, ib = 0) emitter cutoff current (veb = 5 vdc, lc = 0) vceo(sus) icex iceo 'ebq 140 - _ - - 100 2 250 100 vdc madc uadc (.tadc second breakdown second breakdown collector current with base forward biased (vce = 50 vdc, t = 1 s (non repetitive)) (vce = 1 00 vdc, t - 1 s (non repetitive)) is/b 5.0 1.0 - - adc ? on characteristics dc current gain (lc = 5 adc, vce = 2 vdc) collector emitter saturation voltage (lc - 5 adc, ib - 0.5 adc) base emitter on voltage (lc - 5 adc, vce = 2 vdc) hfe vce (sat) ^be(on) 25 - - 150 1.0 2.0 - vdc vdc dynamic characteristics current gain ? bandwidth product (lc = 0.5 adc, vce = 10 vdc, ftes, = 0.5 mhz) output capacitance (vcb = 1 0 vdc. ie = 0, ftest - 1 mhz) ft cob 2.0 - _ 1000 mhz pf 1. pulse test: pulse width = 300 ms, duty cycle < 2%.
|
